|
|
What is more beneficial, upgrading CPU or increasing memory?
It is more beneficial to increase a computers memory than upgrading its CPU. The following two illustrations demonstrate this fact: (Source: Micron Technology)
Performance Increase with the addition of DRAM CPU Speed DRAM Performance Increase PII 300 MHz 32 MB Base Line PII 300 MHz 64 MB 40.16 % over Base Line PII 300 MHz 128 MB 51.64 % over Base Line PII 350 MHz 32 MB Base Line PII 350 MHz 64 MB 39.55 % over Base Line PII 350 MHz 128 MB 52.24 % over Base Line Celeron 433 MHz 32 MB Base Line Celeron 433 MHz 64 MB 45.93 % over Base Line Celeron 433 MHz 128 MB 60.74 % over Base Line PIII 500 MHz 32 MB Base Line PIII 500 MHz 64 MB 51.37 % over Base Line PIII 500 MHz 128 MB 65.07 % over Base Line
Performance Increase with CPU Upgrades CPU Speed DRAM Performance Increase PII 300 MHz to PII 350 MHz 32 MB 9.84% PII 300 MHz to PII 350 MHz 64 MB 9.36% PII 300 MHz to PII 350 MHz 128 MB 10.27% PII 350 MHz to Celeron 433 MHz 32 MB 0.75% PII 350 MHz to Celeron 433 MHz 64 MB 5.35% PII 350 MHz to Celeron 433 MHz 128 MB 6.37% PII 350 MHz to PIII 500 32 MB 8.96% PII 350 MHz to PIII 500 64 MB 18.18% PII 350 MHz to PIII 500 128 MB 18.14%
It is always easier and cheaper to increase memory in your PC system, and you will get better performance as well. Increasing memory is clearly the better choice.
What is the difference between Buffered and Unbuffered memory?
Buffered memory modules are designed for systems with larger number of module slots. There is a physical difference in the keying notches?on both types of the modules and the system memory sockets which help ensure that only the correct kind of module can be installed into the system. On buffered modules there are special buffer chips on the module that control the way the memory is accessed. Buffer chips are usually smaller than the main DRAM memory chips.
Unbuffered memory utilizes buffers off the module, usually located on the motherboard and is very common in desktop applications.
Are the PC100 8ns modules better than PC100 10ns, and are PC100 7ns modules better than PC100 10 ns modules?
In general, major brands are much more reliable. However, the marking on the major brands of memory chips can sometimes be confusing as noted below.
The following is a list of suffix of some major brand PC100 SDRAM fs:
BRAND CL2 CL3 FUJI -102FN -103FN HITACHI -A6 -B6 HYUNDAI -10P -10S LG -7K -7J MICRON -8E -8C NEC -A8 -A10 SAMSUNG -GH -GL VITELIC -8PC -8
As you can see from above, Hitachi -B6 is not faster than Hyundai -10P, and L.G. -7J is not as fast as Fuji -102 FN. Therefore, it is not the marking on the chip that determines the speed and performance of the SDRAM. It is the specs that determines that the speed and performance. Donft be fooled by the misleading marking on the chips, and always have a close look on the specs.
Who are our major suppliers of SDRAMs?
NEC, Micron (acquired T.I. memory business in 1998), Toshiba, Infenion (formerly Siemens), OKI, Fujitsu, Hitachi, Samsung, Hyundai / LG (merged semiconductor businesses in 1999), etc, all the major OEM DRAM manufacturers.
What is the difference between FPM (Fast Page Mode) and EDO (Extended Data Output) DRAMS?
Both these define how the information within the DRAM cell is addressed within the page. A page is a section of memory available within a row address. With FPM you only need to specify the row address once for accesses within the same page addresses. Successive accesses to the same page of memory only require a column address, saving time. EDO have the ability to work within a page like FPM but it can hold the data valid even after the signal that gstrobes?the column address goes inactive. This allows faster microprocessors to manage time more efficiently, so that while an EDO DRAM is retrieving an instruction from the CPU, the CPU can perform other tasks without worrying that the data will become invalid.
What is a refresh Rate and Self-Refresh?
Memory module is made up of electrical cells. The refresh process recharges these cells, which are arranged on the chips in rows. The refresh rate refers to the number of rows that must be refreshed. The common refresh rates are 1K, 2K, 4K and 8K. The 2K components are capable of refreshing more cells at a time and they complete the process faster, therefore 2K components use more power that 4K or 8K refresh. The 4K components are capable of refreshing fewer cells at a slower time, but they use less power. Some specialty designed DRAMs feature self refresh technology, which enables the components to refresh on their own-- independent from the CPU or external refresh circuits. Self refresh, which is built into the DRAM itself, reduces power consumption, and it is commonly used in notebook computers and laptop computer.
What is RDRAM and how does it differ from SDRAM?
RDRAM is a new memory design developed by Rambus, Inc. It is extremely fast and utilizes a narrow, two byte wide high bandwidth Channel?to transmit data at speeds about ten times faster than standard DRAM modules and three times faster than PC100 SDRAM modules, as claimed by Rambus Inc. It comes in speed of 600 MHz, 711 MHz and 800 MHz. RDRAM modules are called RIMM and are standard with 184 pins. C-RIMM, used as a terminating resistor board, are required to fill up any open memory module slots and allow signals to cross connectors.
OVERVIEW
Direct RDRAM can deliver up to 1.6 GB per second bandwidth per channel and achieve transfer rates of up to 800 MHz. Direct RDRAM have high bandwidth to support Transparent administration?such as Windows NT systems. Direct is a revolutionary design approach provides performance through DRAM IC design. Direct RDRAM is supported by Intel chipsets. Direct RDRAM is using a ?acket Protocol?and ?Rambus Signal Level?Logic interface Licensed from Rambus, Inc
ADVANTAGES
Higher Performance - 1.6GB/s of Bandwidth per channel. Rambus RIMM Modules provide 3 times the memory system performance of today PC100 SDRAM Modules as claimed by Rambus. Support Chip level granularity. Flexible expandability. Lower power consumption.
Rambus is Intel supported:
All the DRAM players will manufacture DIRECT RDRAM. Has been growing at a compound Annual growth Rate of 141%.
DISADVANTAGES
It is not an open standard; royalty fees are required. Requires huge investments in manufacturing and test equipment. Requires a tremendous effort in redesigning. Difficult to assemble modules. Supply will be very limited. High Dram cost Compatibility issues ?Different brands cannot be mixed on either the same module or in the same systems. Different brand of modules can not be mixed in the same system.
Should you need more information about the product that you are going to order, please do hesitate to email us at info@enetshoponline.com!!
|
| |
 |
 | |
